发明名称 |
Power semiconductor device |
摘要 |
A power semiconductor device that includes a plurality of gate structure each having a gate insulation of a first thickness, and a termination region, the termination including a field insulation body surrounding the active region and having a recess that includes a bottom insulation thicker than the first thickness.
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申请公布号 |
US7385273(B2) |
申请公布日期 |
2008.06.10 |
申请号 |
US20060449940 |
申请日期 |
2006.06.09 |
申请人 |
INTERNATIONAL RECTIFIER CORPORATION |
发明人 |
BURKE HUGO R;GREEN SIMON |
分类号 |
H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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