发明名称 Copper alloy, fabrication method thereof, and sputtering target
摘要 A Cu alloy for semiconductor interconnections contains at least one selected from the group consisting of 0.10 to 10 atomic percent of Sb, 0.010 to 1.0 atomic percent of Bi, and 0.01 to 3 atomic percent of Dy, with the balance being Cu and inevitable impurities. The Cu alloy can be reliably embedded in narrow trenches and/or via holes for interconnections.
申请公布号 US7385293(B2) 申请公布日期 2008.06.10
申请号 US20050229721 申请日期 2005.09.20
申请人 KOBE STEEL, LTD. 发明人 MIZUNO MASAO;ONISHI TAKASHI
分类号 H01L23/48 主分类号 H01L23/48
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