COMPLEMENTARY METAL OXIDE SEMICONDUCTOR DEVICE USING THIN FILM TRANSISTOR AND METHOD OF FABRICATING THE SAME

摘要

A CMOS device using thin film transistors and a manufacturing method thereof are provided to improve the degree of integration of a semiconductor device by forming plural thin film transistors in a stack structure. An n-type thin film transistor is formed on a substrate, and a p-type thin film transistor is formed on the n-type thin film transistor. An interlayer dielectric(180) is formed between the n-type thin film transistor and the p-type thin film transistor. A metallization(190) electrically connects the n-type thin film transistor with the p-type thin film transistor. The n-type thin film transistor has a first polysilicon active layer(110), and the p-type thin film transistor has a second polysilicon active layer(210).