HIGH DENSITY SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要
<p>A highly-integrated semiconductor memory device and a manufacturing method thereof are provided to correctly read data by suppressing a leakage current generated as the semiconductor memory device is highly integrated. A source/drain electrode(220A) are formed on a silicon substrate to form a schottky junction with a channel region(220B). A floating gate composed of plural silicon nanodots(260A) is formed on the substrate of the channel region. The silicon nanodot is made of a silicon compound as a basal body, and a gate dielectric layer(270) is formed on the floating gate. A tunneling dielectric layer(250) is formed between the substrate of the channel region and the floating gate, and a control gate(280) is formed on the floating gate.</p>
申请公布号
KR20080051010(A)
申请公布日期
2008.06.10
申请号
KR20070094687
申请日期
2007.09.18
申请人
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE