| 摘要 |
A method for manufacturing a semiconductor device is provided to prevent an etching damage of a metal layer and to restrain the increase of resistance by forming a capping layer for preventing an over-etching. A first dielectric layer(102) is formed on a semiconductor substrate(100). A metal wire(110) is formed on the first dielectric layer. Wall metal layers(104,108), an etch stop layer(112), and a capping layer(114) are formed on the metal wire. A second dielectric layer(116) is formed on the capping layer and the first dielectric layer. A first etching process is performed to expose a part of the etch stop layer. A second etching process is performed to expose a part of the barrier metal layer. A barrier metal layer is formed between the metal wire and the first dielectric layer. The barrier metal layer and the wall metal layer are made of Ti/TiN. The metal wire is made of aluminum. The etch stop layer is made of SiON or a nitride layer.
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