发明名称 METHOD OF MANUFACTURE OF HIGH-TEMPERATURE THIN-FILM RESISTOR
摘要 FIELD: physics, measurement. ^ SUBSTANCE: invention relates to the electronic equipment, in particular, to the transducer manufacture technology, and may be used for the development of compact metal-film transducers of mechanical quantities capable of operating in a wide range of operating temperatures (-196-+150)C. The purpose is attained by the following: in the proposed method of manufacture of a high-temperature thin-film resistor of a nickel- and chromium-based material, involving formation of resistive monolayers with a negative and positive TCR in vacuum, layer-by-layer formation of resistive monolayers is carried out in a single process cycle, a resistive layer with a negative TCR is formed by electron-beam evaporation, and a resistive layer with a positive TCR is formed by thermal evaporation; the resistance of a two-layer thin-film resistor is determined by a mathematical expression. ^ EFFECT: decrease in labour consumption, increase in thin-film resistor production volume. ^ 1 dwg, 1 tbl
申请公布号 RU2326460(C1) 申请公布日期 2008.06.10
申请号 RU20070102533 申请日期 2007.01.23
申请人 FGUP "NII FIZICHESKIKH IZMERENIJ" 发明人 VOLOKHOV IGOR' VALER'JANOVICH;PESKOV EVGENIJ VLADIMIROVICH;POPCHENKOV DMITRIJ VALENTINOVICH
分类号 H01C17/00;G01L7/08 主分类号 H01C17/00
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