PLANAR TYPE GUNN DIODE FOR FLIP CHIP PACKAGE

摘要

A planar type gun diode for use in a flip-chip package is provided to reduce a manufacture cost by forming a thin active layer without polishing a semiconductor substrate thinly. A semiconductor substrate(31) is comprised of a semi-insulating compound semiconductor. An active layer(33) comprised of a compound semiconductor, where impurities are doped with a high concentration by an epitaxial growth method, is formed on the semiconductor substrate. A spacer layer(35) is formed on a predetermined part on the active layer to expose both sides of the active layer by making a mesa structure with the impurity-doped compound semiconductor formed by a liquid or vapor epitaxial growth method. A first contact resistance layer(37) is formed on the spacer layer with the impurity-doped compound semiconductor formed by the liquid or vapor epitaxial growth method. A second contact resistance layer(41) is formed on a part of the active layer where the spacer layer is not formed. The second contact resistance layer is formed with the impurity doped compound semiconductor formed by the liquid or vapor epitaxial growth method. A cathode electrode(39) is formed on the first contact resistance layer. An anode electrode(43) is formed on the second contact resistance layer.