| 摘要 |
A semiconductor light emitting device is provided to reflect the light which is emitted from an active layer so as not to be absorbed by an electrode by forming a reflective electrode having a divided structure, thereby enhancing entire light emitting efficiency. A semiconductor light emitting device comprises an n-type semiconductor layer(130), a p-type semiconductor layer(150), an active layer(140), an n-type reflective electrode(170) and a p-type reflective electrode(180). The active layer is formed between the n-type semiconductor layer and the p-type semiconductor layer. The n-type reflective electrode reflecting the incident light is formed on the n-type semiconductor layer. The p-type reflective electrode reflecting the incident light is formed on the p-type semiconductor layer. The light emitted from the active layer is emitted toward the upper direction that the reflective electrodes are formed. |
