METHOD FOR FABRICATING CMOS IMAGE SENSOR

摘要

A method for fabricating a CMOS image sensor is provided to improve the dark current property and light sensitivity by implanting fluorine ions into a region doped with p-type dopant of a photodiode region. A photodiode region is formed on the surface of a semiconductor substrate(101) by implanting a first conductive dopant. A second conductive diffusion region(112) is formed by implanting a second conductive dopant into the upper part of the photodiode region. A fluorine diffusion region(113) is formed by implanting fluorine ions into the second conductive diffusion region.