| 摘要 |
A semiconductor light emitting device and a method of manufacturing the same are provided to control the property of the light emitting device easily by controlling the magnitude and density of a micro roughness and an anti-reflection layer forming region through a simplified process. A semiconductor light emitting device comprises a first semiconductor layer(130) on which a grain is formed, a micro roughness layer(142) which is formed on the first semiconductor layer based on the grain, a reflective layer(144) which is formed on the micro roughness layer, and a second semiconductor layer(140) which is formed on the reflective layer.
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