| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a structure provided with a diaphragm having no corners between the surface and the surroundings, and to provide a semiconductor. SOLUTION: The system has an insulating film forming process for forming an insulating film 3 on one surface side of a semiconductor substrate 1, a patterning process for forming an open-shaped opening 4 on the insulating film 3 corresponding to a predetermined shape of the diaphragm 7, an anodic oxidation process for forming a porous section 6 where the substrate 1 is formed to be porous at a region exposed from the opening 4 on the one surface of the semiconductor substrate 1 by turning on electricity between an anode 5 of shape corresponding to a shape of the diaphragm 7 and the cathode on the other surface of the semiconductor substrate 1, with at least the one surface of the semiconductor substrate 1 and the anode disposed as opposed to the one surface of the semiconductor substrate 1 allowed to contact an electrolyte, and a porous section removing process for forming the diaphragm 7 consisting of a part of the semiconductor substrate 1 by removing the porous section 6. COPYRIGHT: (C)2008,JPO&INPIT
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