| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor device, along with its manufacturing method, that comprises a P-type electrode of which contact resistance between a P-type contact layer and the P-type electrode is low. SOLUTION: The nitride semiconductor device comprises a P-type contact layer 1 and a P-type electrode provided on the P-type contact layer 1. The P-type electrode comprises an AuGa film 2 provided on the P-type contact layer 1, an Au film 3 provided on the AuGa film 2, a Pt film 4 provided on the Au film 3, and an Au film 5 provided on the Pt film 4. The percentage of the thickness of the AuGa film 2 against the total film thickness of AuGa film 2 and Au film 3 is 12-46%. COPYRIGHT: (C)2008,JPO&INPIT
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