| 摘要 |
A method for manufacturing a semiconductor device and the semiconductor device are provided. A mixed impurity of fluorine and boron are implanted into a polysilicon layer in a PMOS region. The fluorine and boron implanted polysilicon layer is etched to form a gate. The fluorine and boron reaction inhibits infiltration of the boron into a gate oxide film or gate spacer during a subsequent thermal process.
|
