| 发明名称 |
Damascene metal-insulator-metal (MIM) device |
| 摘要 |
The present method of fabricating a memory device includes the steps of providing a dielectric layer, providing an opening in the dielectric layer, providing a first conductive body in the opening in the dielectric layer, providing a switching body in the opening, and providing a second conductive body in the opening.
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| 申请公布号 |
US2008132068(A1) |
申请公布日期 |
2008.06.05 |
| 申请号 |
US20060633929 |
申请日期 |
2006.12.05 |
| 申请人 |
SPANSION LLC, ADVANCED MICRO DEVICES, INC. |
发明人 |
PANGRLE SUZETTE K.;AVANZINO STEVEN;HADDAD SAMEER;VANBUSKIRK MICHAEL;RATHOR MANUJ;XIE JAMES;SONG KEVIN;MARRIAN CHRISTIE;CHOO BRYAN;WANG FEI;SHIELDS JEFFREY A. |
| 分类号 |
H01L21/44 |
主分类号 |
H01L21/44 |
| 代理机构 |
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