| 摘要 |
<p>The present invention relates to a memory device (1) comprising a molecule-atom complex (4, 5, 6) arranged on a first insulating layer (3), wherein a first memory state of the memory device (1) corresponds to a first charge distribution state of the molecule-atom complex (4, 5, 6) and a second memory state of the memory device (1) corresponds to a second charge distribution state of the molecule-atom complex (4, 5, 6), wherein the total charge of the molecule-atom complex (4, 5, 6) corresponding to the first memory state is equal to the total charge of the molecule-atom complex (4, 5, 6) corresponding to the second memory state, said first insulating layer (3) being formed on a first contact layer (2) and said molecule-atom complex (4, 5, 6) comprising at least a single atom (5) and at least a molecule (4) on said first insulating layer (3).</p> |
