| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce the leakage current of a semiconductor device which is formed on a SOI substrate and equipped with inverters. <P>SOLUTION: The SOI substrate is equipped with a semiconductor substrate, an insulating film formed thereon, and a semiconductor film formed thereon, and a logic circuit is equipped with inverters INV1 and INV2 which are formed on the SOI substrate and cross-connected. A back gate 7A, which is located on the semiconductor substrate of an n-channel type MISFETTN1 and a p-channel type MISFETTP1 constituting the inverter INV1, is set at the same potential and connected to the output of the inverter INV2, and a back gate 7B, which is located on the semiconductor substrate of an n-channel type MISFETTN2 and a p-channel type MISFETTP2 constituting the inverter INV2, is set at the same potential and connected to the output of the inverter INV1. <P>COPYRIGHT: (C)2008,JPO&INPIT |
