| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor memory device forming a large-capacity capacitor, by forming an upper part electrode over the entire surface of a dielectric layer in a groove, without reducing the grain size of an HSG-Si layer nor closing the opening part of the groove that forms a cylinder-type capacitor with HSG-Si. <P>SOLUTION: The manufacturing method of a semiconductor device, equipped with a capacitor formed with a cylinder structure, includes, at least a process in which an oxide film is deposited; a process for forming a cylinder for constituting a capacitor inside of it on the oxide film; a process for forming an amorphous silicon film along the inside surface of the cylinder, for forming a mask layer that suppresses growth of HSG on the amorphous silicon film in the inner peripheral region near a cylinder opening part; a process in which the amorphous silicon is subjected to HSG process and then converted into polycrystalline silicon at the same time; a process for removing the mask layer, a process for forming an insulating film on the polycrystalline silicon; and a process for forming a conductive layer on the insulating film. <P>COPYRIGHT: (C)2008,JPO&INPIT |
