| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an in beam source for preventing abnormal discharge generated in the vicinity of each cathode and suppressing the generation of particles and splashes, and to provide a film deposition system provided therewith. <P>SOLUTION: The ion beam source comprises a metallic enclosure provided with cathodes, magnetic gaps, a magnetic field generating means for generating a magnetic field in the enclosure, reactive gas introducing means for introducing reactive gas into the enclosure, and anodes each arranged in the vicinity of the magnetic gap; wherein an insulating coating film is formed on the surface of each cathode in such a manner that the film thickness is controlled to 100 to 200 μm. <P>COPYRIGHT: (C)2008,JPO&INPIT |
