| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device that improves photodetection precision. <P>SOLUTION: A semiconductor photodetector 10 includes a buffer layer 12, an n-type DBR layer 13, a photodetection layer 14, and a p-type contact layer 15 that are laminated in this order on an n-type sloped substrate 11. The semiconductor photodetector is formed integrally with a vertical-cavity surface-emitting laser 20 disposed thereon. The photodetection layer 14 is made of a semiconductor having a band gap that is larger than the band gap of the active layer 24 but is twice or less than that of the active layer 24. Because of this, elementary-wave light out of laser light generated in the vertical-cavity surface-emitting laser 20 is not absorbed at a photodetection layer 14 but transmitted through that layer 14, while SHG light having intensity proportional to approximately the square of the intensity of the elementary-wave light is absorbed and converted into photocurrent at the photodetection layer 14. <P>COPYRIGHT: (C)2008,JPO&INPIT |
