| 摘要 |
A memory device, and associated methods of manufacture and operation are described. The memory device includes at least one memory unit comprising a substrate ( 120 ) supporting mobile charge carriers. Insulative features ( 130, 132, 134 ) formed on the substrate surface define first and second substrate areas ( 122, 124 ) on either side of the insulative features. The first and second substrate areas are connected by an elongate channel ( 140 ) defined by the insulative features. The memory unit is switchable between a first state in which the channel provides a first conductance between the first and second areas at a predetermined potential difference between said first and second areas, and a second state in which the channel provides a second, different conductance between the first and second areas at the predetermined potential difference. A write circuit ( 150 ) is arranged to apply a first potential difference across the first and second areas of said memory unit, for changing the memory unit to the first state, and a second, different potential difference for changing the memory unit to the second state. A read circuit ( 150 ) is arranged to apply the predetermined potential difference across the first and second areas of the memory unit, for reading the state of the memory unit.
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