| 摘要 |
In a first method of writing data to a resistive memory device (i.e. programming or erasing), successive electrical potentials are applied across the resistive memory device, wherein the successive electrical potentials are of increasing duration. In another method of writing data to a resistive memory device (i.e. programming or erasing), an electrical potential is applied across the resistive memory device, and the level of current through the memory device is sensed as the electrical potential is applied. The application of the electrical potential is ended based on a selected level of current through the resistive memory device.
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