| 摘要 |
<p>A method for forming a mask pattern used in an ion implantation process is provided to improve a subsequent ion implantation process by gap-filling a hydrophile property material between target etching layer patterns and forming a photoresist pattern. A target etching layer pattern(15) is formed on an upper portion of a semiconductor substrate(11) having an active region(13). A hydrophile property material is spin-coated on the entire surface of the target etching layer pattern. A non-aqueous photoresist layer is formed on the entire surface of the resultant structure. An exposure process is performed on the photoresist layer. A development process is performed on the exposed photoresist layer and the hydrophile property material to form a photoresist pattern(19-1) including an opening(23) which exposes the active region. An ion implantation process is performed on the exposed active region by using the photoresist pattern as a mask.</p> |
