发明名称 |
METHOD FOR REPAIR HALF TONE MASK PORTION AND THIN FILM TRANSISTOR DEVICE USING THEREOF |
摘要 |
<p>A method for repairing a half-tone mask and a method for manufacturing a thin film transistor device thereby are provided to uniformly form light transmittance by forming a repair part with a lattice pattern. A gate pattern including a gate line and a gate electrode(20) are formed on a transparent substrate(10). A gate insulating layer(30) is formed on the substrate having the gate pattern. An active layer(40), a source electrode(60), and a drain electrode(70) are formed on the gate insulating layer. A data line(50) is connected to the source electrode. An ohmic contact layer is formed between the active layer, the source electrode, and the drain electrode. A data pattern is formed by performing a mask process using a single slit mask. A protective layer(80) having a contact hole(90) is formed by performing a mask process. A pixel electrode(135) is formed by performing a mask process.</p> |
申请公布号 |
KR20080049951(A) |
申请公布日期 |
2008.06.05 |
申请号 |
KR20060120571 |
申请日期 |
2006.12.01 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KANG, HOON;KIM, JAE SUNG;JUNG, YANG HO;LEE, HI KUK;CHAI, CHONG CHUL |
分类号 |
H01L21/027 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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