| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of increasing the switching speed of a transistor for driving a load by switching, thereby capable of reducing the switching loss. <P>SOLUTION: Some or all of multiple LDMOS transistors 31a through 31c, which are provided in a driver circuit 30 and have different planar sizes, are driven by a switching signal generated in a predriver circuit 20. As a result of this, the switching speed of each of the transistors 31a through 31c is increased, and thereby makes the switching power loss reduced. <P>COPYRIGHT: (C)2008,JPO&INPIT |
