| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device capable of reducing leak current. SOLUTION: The method for manufacturing a semiconductor device, which comprises a first hetero semiconductor region 3 made of a semiconductor material having a band gap width different from that of a drift region 2 and which is put into heterojunction with the drift region 2, a gate insulating film 4 formed so that it comes into contact with the heterojunction of the drift region 2 and the first hetero semiconductor region 3, a gate electrode 5 formed in contact with the gate insulating film 4, and a gate electrode lower electric field relaxation region 9 that comes into contact with the drift region 2 and the gate insulating film 4 a predetermined distance apart from the heterojunction drive end portion, which is the portion that comes into contact with the gate insulating film 4 among the heterojunction portions, includes a step for forming a first mask member 10 patterned into a predetermined shape on the first hetero semiconductor region 3 and a step for forming the gate electrode lower electric field relaxation region 9 and the heterojunction drive end portion using the mask member 10. COPYRIGHT: (C)2008,JPO&INPIT
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