| 摘要 |
PROBLEM TO BE SOLVED: To provide an insulation gate type semiconductor device which is capable of enhancing hot carrier resistance without increasing the number of process steps or a device pitch for a trench lateral-type MOSFET and without damaging voltage resistance/RonA characteristics of the device. SOLUTION: A junction depth Xj of a (p) base region of a TLPM (Trench Lateral Power MOSFET) is made shallower than a trench depth, and a trench is formed so that a depth (Dt) becomes about Dt=1.2μm, so as not to contact a curvature part of a trench bottom part. COPYRIGHT: (C)2008,JPO&INPIT
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