SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To achieve a semiconductor device having a full-silicide gate electrode capable of stabilizing the threshold voltage of an n-type MOSFET and a p-type MOSFET and preventing reliability from deteriorating. SOLUTION: The semiconductor device comprises: a semiconductor substrate 11; an n-type MOSFET that is formed at an n-type transistor formation region 13A formed on the semiconductor substrate 11 and has a full-silicide gate electrode 24; and a p-type MOSFET that is formed at a p-type transistor formation region 13B formed on the semiconductor substrate and has a full-silicide gate 23 whose film thickness is identical to that of the full-silicide gate electrode 24. In the semiconductor device, the full-silicide gate electrodes 23, 24 are made of metal silicide each. COPYRIGHT: (C)2008,JPO&INPIT