发明名称 SEMICONDUCTOR DEVICE, AND RADIO COMMUNICATION APPARATUS HAVING THE SAME
摘要 PROBLEM TO BE SOLVED: To reduce an element area of a pair of MOSFETs while ensuring predetermined pair performance. SOLUTION: In a power amplifier including a pair of MOSFETs 50 each having an active region 14 and a gate electrode 11 having the same profile, the gate electrodes 11 of the paired MOSFETs 10a, 10b are each composed of first portions 11a extending in one direction and second portions 11b extending in another direction crossing the one direction. A plurality of the first portions 11a and a plurality of the second portions 11b are provided, thereby disposing the gate electrodes 11 in matrix. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008130581(A) 申请公布日期 2008.06.05
申请号 JP20060310000 申请日期 2006.11.16
申请人 RENESAS TECHNOLOGY CORP 发明人 IIDA TETSUYA
分类号 H01L21/8234;H01L21/822;H01L27/04;H01L27/088;H01L29/78;H03F3/343 主分类号 H01L21/8234
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