发明名称 Silicon light emitting diode, silicon optical transistor, silicon laser and its manufacturing method
摘要 A light-emitting device according to the present invention includes a first electrode unit 9 for injecting an electron, a second electrode unit 10 for injecting a hole, and light-emitting units 11 and 12 electrically connected to the first electrode unit 9 and the second electrode unit 10 respectively, wherein the light-emitting units 11 and 12 are formed of single-crystal silicon, the light-emitting units 11 and 12 having a first surface (topside surface) and a second surface (underside surface) opposed to the first surface, plane orientation of the first and second surfaces being set to a (100) plane, thicknesses of the light-emitting units 11 and 12 in a direction orthogonal to the first and second surfaces being made extremely thin.
申请公布号 US2008128713(A1) 申请公布日期 2008.06.05
申请号 US20070790283 申请日期 2007.04.24
申请人 SAITO SHINICHI;HISAMOTO DIGH;ARAI TADASHI;ONAI TAKAHIRO 发明人 SAITO SHINICHI;HISAMOTO DIGH;ARAI TADASHI;ONAI TAKAHIRO
分类号 H01L33/34 主分类号 H01L33/34
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