A LIGHT EMITTING DIODE OF A NITRIDE COMPOUND AND FABRICATING METHOD THEREFOR

摘要

A nitride semiconductor light emitting diode and a method for manufacturing the same are provided to reduce the density of crystal defect in an active layer formed on a first conductive type semiconductor layer by employing an undoped nitride layer or the first conductive type semiconductor layer having a less crystal defect. A buffer layer(23) is formed on a substrate(21). A discontinuous layer(25) is discretely formed on the buffer layer to reduce the density of electric potential thereof. An undoped nitride semiconductor layer(27) of a AlxInyGa(1-x-y)(0 X, Y 1 and 0 X+Y 1) material layer is formed on the substrate on which the discontinuous layer is formed. A first conductive type semiconductor layer(29) of a AlxInyGa(1-x-y)(0 X, Y 1 and 0 X+Y 1) material layer is formed on the undioped nitride semiconductor layer. An active layer(31) is formed on the first conductive type semiconductor layer. A second conductive type semiconductor layer(33) of a AlxInyGa(1-x-y)(0 X, Y 1 and 0 X+Y 1) material layer is formed on the active layer. The discontinuous layer is made of one selected from SiO2, SiN, and Si.