发明名称 SEMICONDUCTOR DEVICE HAVING SENSE AMPLIFIERS
摘要 A semiconductor device including a sense amplifier is provided to increase an operating speed of the sense amplifier by arranging NMOS transistors of the sense amplifier and a gate electrode of an equalizer transistor. A semiconductor device having a sense amplifier includes a first NMOS transistor(N1), a second NMOS transistor(N2), and an equalizing transistor(TEQ). A gate electrode and a first electrode of the first NMOS transistor are electrically connected to a bit line(BL) and a complementary bit line(BL/), respectively. A gate electrode and a first electrode of the second NMOS transistor are electrically connected to the complementary bit line and the bit line, respectively. The equalizing transistor is arranged between the gate electrode of the first NMOS transistor and the gate electrode of the second NMOS transistor. The first electrode of the first NMOS transistor and the first electrode of the second NMOS transistor are electrically connected to a first electrode and a second electrode of the equalizing transistor, respectively.
申请公布号 KR100834746(B1) 申请公布日期 2008.06.05
申请号 KR20070015227 申请日期 2007.02.14
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KWON, WHEE JIN;LEE, JUNG HWA
分类号 H01L27/04 主分类号 H01L27/04
代理机构 代理人
主权项
地址