| 摘要 |
A method for minimizing program disturb in Flash memories. To reduce prog ram disturb in a NAND Flash memory cell string where no programming from the erased state is desired, a local boosted channel inhibit scheme is used. In the local boosted channel inhibit scheme, the selected memory cell in a NAN D string where no programming is desired, is decoupled from the other cells in the NAND string. This allows the channel of the decoupled cell to be loca lly boosted to a voltage level sufficient for inhibiting F-N tunneling when the corresponding wordline is raised to a programming voltage. Due to the hi gh boosting efficiency, the pass voltage applied to the gates of the remaini ng memory cells in the NAND string can be reduced relative to prior art sche mes, thereby minimizing program disturb while allowing for random page progr amming.
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