| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a grinding method capable of grinding a plurality of kinds of semiconductor wafers having different diameters by one kind of grinding stone wheel. <P>SOLUTION: After a portion of the internal peripheral side in the wafer 1 is ground, the grinding stone 45b (46b) is elevated to be moved to the outer peripheral side of the wafer 1. Then, the grinding stone 45b (46b) is lowered to grind the wafer 1 so as to allow a blade portion of the grinding stone 45b (46b) to contact the internal peripheral surface 5B of a recess 1A that is formed to be the wafer 1. <P>COPYRIGHT: (C)2008,JPO&INPIT |
