| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element that improves light extraction efficiency, and to provide a manufacturing method for the semiconductor light-emitting element. <P>SOLUTION: The semiconductor light-emitting element includes an n-type DBR layer 3, an n-type Al<SB>0.5</SB>In<SB>0.5</SB>P clad layer 4, a four-element AlGaInP active layer 5, a p-type Al<SB>0.5</SB>In<SB>0.5</SB>P clad layer 6, a p-type GaInP intermediate layer 7, a p-type GaP contact layer 8, a p-type GaP transparent substrate 9, ohmic electrodes 10 and 11, and a reflective layer 12. The n-type DBR layer 3 is composed of 20 pairs of n-type AlAs light reflective layers and n-type Al<SB>0.61</SB>Ga<SB>0.39</SB>As light reflective layers, and has reflectivity against the wavelength of light emitted from the AlGaInP active layer 5. <P>COPYRIGHT: (C)2008,JPO&INPIT |
