发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To prevent the breakage of a contact of an adjacent fuse circuit when a fuse of the fuse circuit is cut by a laser. SOLUTION: This semiconductor device is provided with fuse circuits 1-1 to 1-6 which are adjacent with one another. Each fuse circuit 1-1 to 1-6 has with diffusion layers 3-1, 3-2 formed on the surface of a semiconductor substrate 2; an insulating film 4 for covering the semiconductor substrate 2 and the diffusion layers 3-1, 3-2; an insulating film 6 for covering the insulating film 4; contact portions 7-1, 7-2 each extending from the surface of the insulating film 6 to surfaces of the diffusion layers 3-1, 3-2 penetrating the insulating films 4, 6; and fuses 8 formed on the insulating film 6 and extending over the contact portions 7-1, 7-2. In the semiconductor device, the insulating films 4, 6 of the fuse circuits 1-1 to 1-6 are formed of the same materials so that the contact portions 7-1, 7-2 of the adjacent fuse circuit 1-5 may be not broken when the fuses 8 of the fuse circuit 1-6 are cut by the laser. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008130580(A) 申请公布日期 2008.06.05
申请号 JP20060309953 申请日期 2006.11.16
申请人 ELPIDA MEMORY INC 发明人 NAGAMINE HISASHI
分类号 H01L21/82;H01L21/822;H01L27/04 主分类号 H01L21/82
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