Storage node including diffusion barrier layer, phase change memory device having the same and methods of manufacturing the same

摘要

A phase change memory device and a method of manufacturing the phase change memory device are provided. The phase change memory device may include a switching element and a storage node connected to the switching element, wherein the storage node includes a bottom electrode and a top electrode, a phase change layer interposed between the bottom electrode and the top electrode, and a titanium-tellurium (Ti-Te)-based diffusion barrier layer interposed between the top electrode and the phase change layer. The Ti-Te based diffusion barrier layer may be a Ti_xTe_1-x layer wherein x may be greater than 0 and less than 0.5.