发明名称 |
HARDMASK FOR IMPROVED RELIABILITY OF SILICON BASED DIELECTRICS |
摘要 |
The present invention provides a hardmask that is located on a surface of a low k dielectric material having at least one conductive feature embedded therein. The hardmask includes a lower region of a hermetic oxide material located adjacent to the low k dielectric material and an upper region comprising atoms of Si, C and H located above the hermetic oxide material. The present invention also provides a method of fabricating the inventive hardmask as well as a method to form an interconnect structure containing the same.
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申请公布号 |
US2008132055(A1) |
申请公布日期 |
2008.06.05 |
申请号 |
US20080016594 |
申请日期 |
2008.01.18 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
NGUYEN SON VAN;LANE MICHAEL;GATES STEPHEN M.;LIU XIAO H.;MCGAHAY VINCENT J.;MEHTA SANJAY C.;SHAW THOMAS M. |
分类号 |
H01L21/4763 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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