| 摘要 |
A method of manufacturing an SOI wafer includes a bonding step, a thinning and a bonding annealing step. Assuming refractive index n 1 of SiO<SUB>2 </SUB>as 1.5, refractive index n 2 of Si as 3.5, and optical thickness t<SUB>OP </SUB>of the silicon oxide film 2 and the SOI layer 15 in the infrared wavelength region as t<SUB>OP</SUB>=n 1 xt 1 +n 2 xt 2 , the thickness t 1 of the silicon oxide film 2 and thickness t 2 of the SOI layer so as to satisfy a relation of 0.1lambda<T<SUB>OP</SUB><2lambda, and so as to make (t 1x n 1 )/(t 2 xn 2 ) fall within 0.2 to 3. By nuclei killer annealing carried out before the bonding annealing, density of formation of oxygen precipitate in the base wafer after the bonding annealing is adjusted to less than 1x10<SUP>9</SUP>/cm<SUP>3</SUP>. This configuration successfully provides a method of manufacturing the SOI wafer having the thin silicon oxide film and the SOI layer, and being less likely to cause warping.
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