| 摘要 |
A thin film transistor of an LCD(Liquid Crystal Display) and a method for manufacturing the thin film transistor are provided to form a channel metal layer pattern on a channel region such that electrons move through the channel metal layer pattern to improve the response speed of the thin film transistor. A thin film transistor includes a semiconductor layer, a channel metal layer pattern(107a), a gate insulating layer(109), and a gate electrode(111a). The semiconductor layer is formed on a substrate(101) and includes a channel region(105c) and source/drain regions(105a,105b) formed apart from each other having the channel region between them. The channel metal layer pattern is formed on the channel region of the semiconductor layer. The gate insulating layer is formed on the semiconductor layer including the channel metal layer pattern. The gate electrode is formed on the gate insulating layer. |
