| 摘要 |
<P>PROBLEM TO BE SOLVED: To attain high-layering of a capacitor without increasing manufacturing costs of a semiconductor device. <P>SOLUTION: The present invention relates to a semiconductor device comprising a DRAM part on a semiconductor substrate, wherein the DRAM part comprises: a first layer insulating film 107 which is formed on the semiconductor substrate including a first transistor and includes a hole; a capacitance element 111 constituted of a lower electrode 108 which is constituted of a first conductive film formed at least on a bottom and a side wall of the hole, a capacitance insulating film 109 formed on the first conductive film and the first layer insulating film, and an upper electrode 110 constituted of a second conductive film formed on the capacitance insulating film; a second layer insulating film 113 including a contact hole 115 for upper electrode formed on the second conductive film; and wiring 124 for upper electrode formed on the second layer insulating film for electrically connecting with the second conductive film through a contact plug 118 for upper electrode provided within the contact hole for upper electrode. The second layer insulating film is constituted of an SiON film or an SiN film. <P>COPYRIGHT: (C)2008,JPO&INPIT |
