发明名称 COMPOUND SEMICONDUCTOR MANUFACTURING METHOD AND COMPOUND SEMICONDUCTOR MANUFACTURING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a compound semiconductor manufacturing method and a compound semiconductor manufacturing apparatus capable of stably manufacturing a compound semiconductor with high productivity and favorable reproducibility. SOLUTION: A pre-processing chamber 2, a main treatment chamber 3 and a post-treatment chamber 4 which can individually execute temperature control and gas control while having different atmospheres communicate with one another via opening/closing doors 5, 6 and 7 which are individually openable and closable. A plurality of specimen plates 9 used for supporting substrates 8 are made to be circularly moved in an order, of the pre-processing chamber 2, the main processing chamber 3, the post-processing chamber 4 and pre-processing chamber 2. In the pre-processing chamber 2, pre-treatment including the supply of the untreated substrates 8 to the specimen plates 9 is executed; in the main treatment chamber 3, main treatment for growing crystals is executed; and in the post-treatment chamber 4, post-treatment including the recovery of the treated substrates 8 from the sample plates 9 and cleaning the specimen plates 9 is executed. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008130589(A) 申请公布日期 2008.06.05
申请号 JP20060310167 申请日期 2006.11.16
申请人 HITACHI CABLE LTD 发明人 NARITA YOSHINOBU
分类号 H01L21/205 主分类号 H01L21/205
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