| 摘要 |
A semiconductor integrated circuit relating to one aspect of the present invention includes a power transistor, at least one or more of first metal patterns functioning as a first electrode of the power transistor and at least one or more of second metal patterns functioning as a second electrode of the power transistor formed in an interlayer insulation film on the transistor, at least one or more of first busses electrically connected to a corresponding first metal pattern of the at least one or more of the first metal patterns, a single second bus electrically connected to the at least one or more of second metal patterns, and a contact pad provided to each of the at least one or more of first busses and the single second bus.
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