SCHOTTKY BARRIER NANOWIRE FIELD EFFECT TRANSISTOR AND METHOD FOR FABRICATING THE SAME

摘要

Provided is a Schottky barrier nanowire field effect transistor, which has source/drain electrodes formed of metal silicide and a channel formed of a nanowire, and a method for fabricating the same. The Schottky barrier nanowire field effect transistor includes: a channel suspended over a substrate and including a nanowire; metal silicide source/drain electrodes electrically connected to both ends of the channel over the substrate; a gate electrode disposed to surround the channel; and a gate insulation layer disposed between the channel and the gate electrode.