PROCESS FOR PRODUCING DIAMOND SINGLE CRYSTAL WITH THIN FILM AND DIAMOND SINGLE CRYSTAL WITH THIN FILM

摘要

A process in which a low-resistivity phosphorus-doped epitaxial diamond thin film having a resistivity at 300 K of 300 Ocm or lower is grown on the main plane of a {111} single crystal substrate under such conditions that a raw-material gas has a phosphorus atom/carbon atom ratio of 3% or higher, characterized in that the main plane has an off angle of 0.50° or larger. Also provided is a diamond single crystal having a low-resistivity phosphorus-doped epitaxial diamond thin film, characterized in that the surface of the thin film has an off angle of 0.50° or larger with the {111} plane and that the low-resistivity phosphorus-doped epitaxial diamond thin film has a resistivity at 300 K of 300 Ocm or lower.