NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

A nitride semiconductor light emitting device is provided to enable the plural active layers having the different wavelength light respectively to realize the different wavelength light without deterioration of a boundary and film quality. A nitride semiconductor light emitting device comprises a first conductive and a second conductive nitride semiconductor layers(12,17) and a plurality of active regions. Wherein, the active regions are formed between the first and the second nitride semiconductor layers, and emits different wavelength light respectively. The active regions comprises a first active layer, which emits a first wavelength light, and a second active layer which emits a second wavelength light which is longer than the first wavelength light. The first and the second active layers are made up of at least one quantum well layer and a quantum barrier layer which are formed alternately.