| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that the formation of a zener diode independently from the formation of an embedded electrode results in increasing the number of diffusion processes, thereby increasing manufacturing cost. SOLUTION: A semiconductor device 1 comprises an embedded gate electrode 104 that is embedded in a semiconductor board 10 and constitutes a field-effect transistor, a drawing electrode 105 arranged on the semiconductor board 10 and connected to the embedded gate electrode 104, and a zener diode 106 placed on the semiconductor board 10. The embedded gate electrode 104 is composed of a first conductivity-type of a first polysilicon doped with first conductivity-type first impurities. The drawing electrode 105 is composed of first conductivity-type second polysilicon doped with first conductivity-type second impurities different from the first impurities. A first area 106a of the zener diode is composed of conductivity-type third polysilicon doped with the second impurities. COPYRIGHT: (C)2008,JPO&INPIT
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