| 摘要 |
PROBLEM TO BE SOLVED: To change the consumption of gas and a gas replacing time according to a change in the number of substrates when the number of treated substrates is changed in a semiconductor manufacturing device so as to achieve the lean consumption of gas and a lean operating time without loss to improve operating efficiency and to decrease a treatment cost. SOLUTION: The batch-type semiconductor manufacturing device is equipped with a vertical treatment furnace, and the vertical treatment furnace is equipped with a reaction tube, a heating unit installed surrounding the reaction tube, a sealing cap airtightly blocking a furnace opening located at the lower end of the treatment furnace, an up-down flange which is provided at the sealing cap in an ascendable/descendable manner and by which the reaction tube can be sealed up, and a boat 26 which holds a prescribed number of substrates 25 and is supported by the up-down flange. A reaction chamber which holds the boat is demarcated with the reaction tube and the up-down flange, and the up-down flange is positioned so as to change the reaction chamber in capacity according to the number of treated substrates. COPYRIGHT: (C)2008,JPO&INPIT
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