| 摘要 |
PROBLEM TO BE SOLVED: To provide a vapor phase growing apparatus that has a mechanism to prevent the accumulation of subproduct produced by process gas after vapor phase growth reaction in a chamber, and to provide a vapor phase growing method. SOLUTION: The vapor phase growing apparatus is provided with a chamber 103 wherein a wafer placed on a supporting base is housed, a first channel to supply gas for forming a film on the wafer and a second channel to discharge the gas, and a cooling water circulating part that is provided around the chamber to control temperature within the chamber. In addition, a temperature sensor for measuring temperature within the chamber is provided on the inner wall of the chamber, and a temperature controller is provided to control the temperature of the cooling water, thereby keeping the inner wall of the chamber at 21°C or higher and 43°C or lower. COPYRIGHT: (C)2008,JPO&INPIT
|
