| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film gas sensor and its manufacturing method capable of reducing variations of resistance values of a SnO<SB>2</SB>sensing film by reducing the roughness height of an underlying surface through the flattening prior to formation of a SnO<SB>2</SB>sensing film and minimizing the coarse portion of columnar crystals. SOLUTION: The thin film gas sensor comprises: a Si substrate 1 of a diaphragm structure; a heater layer 5 formed on Si substrate 1 through support layers 2, 3 and 4 of a multilayered structure; a pair of sensing film electrodes 7 formed on the heater layer 5 through a SiO<SB>2</SB>insulation film 6; and a SnO<SB>2</SB>sensing film 8 formed so as to lie on the pair of the sensing film electrodes 7, wherein the sensing film electrodes 7 are formed on the surface of the SiO<SB>2</SB>insulation film 6 flattened by polishing. COPYRIGHT: (C)2008,JPO&INPIT
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