| 摘要 |
A semiconductor device includes a substrate, a first insulating film, a first semiconductor layer disposed above the substrate with the first insulating film therebetween, a second semiconductor layer disposed above the first semiconductor layer with a second insulating film therebetween, a first conductivity type metal oxide semiconductor (MOS) disposed on at least one side surface of the first semiconductor layer, a second conductivity type MOS disposed on at least one side surface of the second semiconductor layer, a charge storage layer common to the first and second MOS transistors, and a control gate common to the first and second MOS transistors. The common charge storage layer is continuously provided from the side surface of the first semiconductor layer on which the first conductivity type MOS transistor is disposed to the side surface of the second semiconductor layer on which the second conductivity type MOS transistor is disposed.
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